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| High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 20N140 IXBH 20N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, TC = 90C TC = 25C, 1 ms Maximum Ratings 20N140 20N160 1400 1400 1600 1600 20 30 20 13 26 ICM = 24 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C Features * International standard package JEDEC TO-247 AD * High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) * Monolithic construction - high blocking voltage capability - very fast turn-off characteristics * MOS Gate turn-on - drive simplicity * Reverse conducting capability VGE = 15 V, TVJ = 125C, RG = 27 W VCE = 0.8*VCES Clamped inductive load, L = 100 mH TC = 25C Applications * * * * Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies * CRT deflection * Lamp ballasts 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/10 Nm/lb.in. 6 g Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20N140 20N160 1400 1600 4 TJ = 25C TJ = 125C 8 300 1 500 TJ = 125C 4.7 5.4 6.5 V V V mA mA nA V V Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 1.5 mA, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2000 IXYS All rights reserved 1-4 031 IXBH 20N140 IXBH 20N160 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2100 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 13 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 960 V, RG = 27 W 140 20 60 200 60 180 40 pF pF pF nC ns ns ns ns 0.6 K/W 0.25 K/W Dim. Millimeter Min. Max. A B C D 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD Outline Cies Coes Cres Qg td(on) tri td(off) tfi RthJC RthCK Reverse Conduction Characteristic Values (TJ = 25C, unless otherwise specified) Conditions min. typ. 3.6 max. 5 V E F G H J K L M N Symbol VF IF = IC90, VGE = 0 V 1.5 2.49 (c) 2000 IXYS All rights reserved 2-4 IXBH 20N140 IXBH 20N160 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 TJ = 25C VGE = 17V 15V 13V 80 70 60 TJ = 125C VGE = 17V 15V 13V IC - Amperes IC - Amperes 50 40 30 20 10 0 0 2 4 6 8 10 12 14 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics 60 VCE = 20V Fig. 2 Typ. Output Characteristics 60 50 50 IF - Amperes IC - Amperes 40 30 20 TJ = 125C TJ = 25C 40 TJ = 25C TJ = 125C 30 20 10 0 10 0 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 VGE - Volts VF - Volts Fig. 3 Typ. Transfer Characteristics 16 14 12 Fig. 4 Typ. Characteristics of Reverse Conduction 30 VCE = 600V IC = 13A ICM - Amperes VGE - Volts 10 8 6 4 2 0 0 10 20 30 40 50 60 70 20 TJ = 125C VCEK < VCES 10 IXBH 20N140 IXBH 20N160 0 0 400 800 1200 1600 QG - nanocoulombs VCE - Volts Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area RBSOA (c) 2000 IXYS All rights reserved 3-4 IXBH 20N140 IXBH 20N160 50 45 300 VCE = 960V VGE = 15V 40 35 30 25 20 0 td(off) - nanoseconds 10 15 20 25 30 tfi - nanoseconds RG = 27W TJ = 125C VCE = 960V V = 15V 250 GE IC = 13A TJ = 125C 200 150 100 50 0 5 0 10 20 30 40 50 IC - Amperes RG - Ohms Fig. 7 Typ. Fall Time 1 Fig. 8 Typ. Turn Off Delay Time 0.1 ZthJC - K/W 0.01 Single Pulse 0.001 0.0001 0.00001 IXBH20 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance (c) 2000 IXYS All rights reserved 4-4 |
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